About Fully Depleted Silicon-on-insulator (FD-SOI) Technology Fully depleted silicon-on-insulator (FD-SOI) is a planar process technology that provides an ideal platform for the development of planner transistor architecture on a SOI substrate. FD-SOI helps in delivering low power, improved performance, and reduced silicon geometries. The FD-SOI technology is based on two innovations: an ultra-thin insulator layer known as buried oxide, which is placed at the top of the silicon base, and a thin layer of silicon, which is used for creating a transistor channel. Owing to this thin layer, the doping of the channel is removed. This means that the impurity atoms that lie in the semiconductor are completely removed, making it fully depleted. The combination of these two innovations is called the ultra-thin body and buried oxide (UTBB)-FD-SOI technology. The FD-SOI structure has evolved from the bulk CMOS process. The FD-SOI technology helps in providing a balance between cost, digital performance, power consumption, and mixed-signal compatibility. Technavio’s analysts forecast the global fully depleted silicon-on-insulator (FD-SOI) technology market to grow at a CAGR... Research Beam Model: Research Beam Product ID: 1935129 3500 USD New
Global Fully Depleted Silicon-on-insulator (FD-SOI) Technology Market 2017-2021
 
 

Global Fully Depleted Silicon-on-insulator (FD-SOI) Technology Market 2017-2021

  • Category : Semiconductor and Electronics
  • Published On : August   2017
  • Pages : 83
  • Publisher : Technavio
 
 
 
About Fully Depleted Silicon-on-insulator (FD-SOI) Technology
Fully depleted silicon-on-insulator (FD-SOI) is a planar process technology that provides an ideal platform for the development of planner transistor architecture on a SOI substrate. FD-SOI helps in delivering low power, improved performance, and reduced silicon geometries. The FD-SOI technology is based on two innovations: an ultra-thin insulator layer known as buried oxide, which is placed at the top of the silicon base, and a thin layer of silicon, which is used for creating a transistor channel. Owing to this thin layer, the doping of the channel is removed. This means that the impurity atoms that lie in the semiconductor are completely removed, making it fully depleted. The combination of these two innovations is called the ultra-thin body and buried oxide (UTBB)-FD-SOI technology. The FD-SOI structure has evolved from the bulk CMOS process. The FD-SOI technology helps in providing a balance between cost, digital performance, power consumption, and mixed-signal compatibility.

Technavio’s analysts forecast the global fully depleted silicon-on-insulator (FD-SOI) technology market to grow at a CAGR of 43.37% during the period 2017-2021.

Covered in this report
The report covers the present scenario and the growth prospects of the global fully depleted silicon-on-insulator (FD-SOI) technology market for 2017-2021. To calculate the market size, the report considers the revenue generated from FD-SOI technology.

The market is divided into the following segments based on geography:
• Americas
• APAC
• EMEA

Technavio's report, Global Fully Depleted Silicon-on-insulator (FD-SOI) Technology Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
• GLOBALFOUNDRIES
• SAMSUNG
• STMicroelectronics
• SOITEC
Other prominent vendors
• Dream Chip Technologies
• INVECAS
• VERISILICON

Market driver
• Smaller die sizes
• For a full, detailed list, view our report

Market challenge
• Challenges associated with 10-nm FD-SOI design
• For a full, detailed list, view our report

Market trend
• Emergence of IoT
• For a full, detailed list, view our report

Key questions answered in this report
• What will the market size be in 2021 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
• What are the market opportunities and threats faced by the key vendors?
• What are the strengths and weaknesses of the key vendors?

You can request one free hour of our analyst’s time when you purchase this market report. Details are provided within the report.



Table of Contents
PART 01: Executive summary
PART 02: Scope of the report
PART 03: Research Methodology
PART 04: Introduction
• Market outline
• Use of FD-SOI in chips
• Advantages of FD-SOI
• Comparison between FinFET and FD-SOI
PART 05: Market landscape
• Market overview
• Market size and forecast
• Five forces analysis
PART 06: Market segmentation by node
• Market overview
• Global FD-SOI technology market by 28-nm FD-SOI technology
• Global FD-SOI technology market by 22-nm FD-SOI technology
• Global FD-SOI technology market by 14-nm FD-SOI technology
• Global FD-SOI technology market by 12-nm/10-nm FD-SOI technology
PART 07: Geographical segmentation
• FD-SOI technology market in Americas
• FD-SOI technology market in APAC
• FD-SOI technology market in EMEA
PART 08: Key leading countries
PART 09: Decision framework
PART 10: Drivers and challenges
• Market drivers
• Market challenges
PART 11: Market trends
• Emergence of IoT
• Decrease in lithography wavelength
• Growth of AR and VR technologies
PART 12: Vendor landscape
• Competitive scenario
PART 13: Key vendor analysis
• GLOBALFOUNDRIES
• SAMSUNG
• STMicroelectronics
• SOITEC
• Other prominent vendors
PART 14: Appendix
• List of abbreviations
List of Exhibits
Exhibit 01: Advantages of FD-SOI at application level
Exhibit 02: Comparison between FinFET and FD-SOI
Exhibit 03: Global FD-SOI technology market: Overview
Exhibit 04: Global FD-SOI technology market 2016-2021 ($ billions)
Exhibit 05: FD-SOI vs FinFET
Exhibit 06: Five forces analysis
Exhibit 07: Global FD-SOI technology market by node 2016-2021 (% share)
Exhibit 08: Global FD-SOI technology market by node 2016-2021 ($ billions)
Exhibit 09: Components of 28-nm FD-SOI platform
Exhibit 10: Global FD-SOI technology market by 28-nm FD-SOI technology 2016-2021 ($ billions)
Exhibit 11: Global FD-SOI technology market by 22-nm FD-SOI technology 2016-2021 ($ billions)
Exhibit 12: Global FD-SOI technology market by 14-nm FD-SOI technology 2016-2021 ($ billions)
Exhibit 13: Global FD-SOI technology market by 12-nm FD-SOI technology 2016-2021 ($ billions)
Exhibit 14: Global FD-SOI technology market by geography 2016 (% share)
Exhibit 15: Global FD-SOI technology market by geography 2016-2021 ($ billions)
Exhibit 16: FD-SOI technology market in Americas 2016-2021 ($ billions)
Exhibit 17: Semiconductor IC companies in Americas
Exhibit 18: FD-SOI technology market in APAC 2016-2021 ($ billions)
Exhibit 19: Semiconductor companies in APAC
Exhibit 20: FD-SOI technology market in EMEA 2016-2021 ($ billions)
Exhibit 21: Semiconductor companies in EMEA
Exhibit 22: Key leading countries 2016
Exhibit 23: Node transition in FD-SOI industry
Exhibit 24: GLOBALFOUNDRIES: Product portfolio
Exhibit 25: SOITEC: Product portfolio
Exhibit 26: Other prominent vendors

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