About Silicon Carbide (SiC) Power Devices A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices. Technavio’s analysts forecast Global Silicon Carbide (SiC) Power Devices market to grow at a CAGR of 35.73% from 2018-2022. Covered in this report The report covers the present scenario and the growth prospects of the Global Silicon Carbide (SiC) Power Devices market for the period 2018-2022. To calculate the market size, the report presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources. The market is divided into the following segments based... Research Beam Model: Research Beam Product ID: 3041360 3500 USD New
Global Silicon Carbide (SiC) Power Devices Market 2018-2022
 
 

Global Silicon Carbide (SiC) Power Devices Market 2018-2022

  • Category : Semiconductor and Electronics
  • Published On : March   2018
  • Pages : 157
  • Publisher : Technavio
 
 
 
About Silicon Carbide (SiC) Power Devices
A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
Technavio’s analysts forecast Global Silicon Carbide (SiC) Power Devices market to grow at a CAGR of 35.73% from 2018-2022.

Covered in this report
The report covers the present scenario and the growth prospects of the Global Silicon Carbide (SiC) Power Devices market for the period 2018-2022. To calculate the market size, the report presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources.

The market is divided into the following segments based on geography:
• Americas
• APAC
• EMEA

Technavio's report, Global Silicon Carbide (SiC) Power Devices Market 2018-2022, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
• Cree
• Infineon Technologies
• Mitsubishi Electric
• ROHM Semiconductor
• STMicroelectronics

Market driver
• Growing demand for power electronics
• For a full, detailed list, view our report

Market challenge
• High SiC material cost
• For a full, detailed list, view our report

Market trend
• Transition toward larger SiC wafer
• For a full, detailed list, view our report

Key questions answered in this report
• What will the market size be in 2022 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?

You can request one free hour of our analyst’s time when you purchase this market report. Details are provided within the report.

Table of contents PART 01: EXECUTIVE SUMMARY

PART 02: SCOPE OF THE REPORT

PART 03: RESEARCH METHODOLOGY

PART 04: MARKET LANDSCAPE

Market ecosystem
Market characteristics
Market segmentation analysis
PART 05: MARKET SIZING

Market definition
Market sizing 2017
Market size and forecast 2017-2022
PART 06: FIVE FORCES ANALYSIS

Bargaining power of buyers
Bargaining power of suppliers
Threat of new entrants
Threat of substitutes
Threat of rivalry
Market condition
PART 07: MARKET SEGMENTATION BY APPLICATION

Segmentation by application
Comparison by application
UPS&PS – Market size and forecast 2017-2022
PV inverters – Market size and forecast 2017-2022
IMDs – Market size and forecast 2017-2022
EV/HEVs – Market size and forecast 2017-2022
Others – Market size and forecast 2017-2022
Market opportunity by application
PART 08: MARKET SEGMENTATION BY PRODUCT

Segmentation by product
Comparison by product
Diodes – Market size and forecast 2017-2022
Transistors – Market size and forecast 2017-2022
Modules – Market size and forecast 2017-2022
Market opportunity by product
PART 09: CUSTOMER LANDSCAPE

PART 10: REGIONAL LANDSCAPE

Geographical segmentation
Regional comparison
APAC – Market size and forecast 2017-2022
EMEA – Market size and forecast 2017-2022
Americas – Market size and forecast 2017-2022
Market opportunity
PART 11: DECISION FRAMEWORK

PART 12: DRIVERS AND CHALLENGES

Market drivers
Market challenges
PART 13: MARKET TRENDS

Transition toward larger SiC wafer
Entrance of multiple suppliers of SiC wafers
Implementation of automation in industries
Use of SiC power devices for extreme operations
PART 14: VENDOR LANDSCAPE

Competitive scenario
Overvie
Landscape disruption
PART 15: VENDOR ANALYSIS0

Vendors covered
Vendor classification
Market positioning of vendors
Cree
Infineon Technologies
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
TOSHIBA
PART 16: APPENDIX

List of abbreviations
PURCHASE OPTIONS
 
 
 

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